Improved Efficiency of 255-280 nm AlGaN-Based Light-Emitting Diodes
Improved Efficiency of 255-280 nm AlGaN-Based Light-Emitting Diodes
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DOI：
10.1143/apex.3.061004
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发表时间：
2010-01-01
影响因子：
2.3
通讯作者：
Amano, Hiroshi
中科院分区：
文献类型：
--
作者：
Pernot, Cyril;Kim, Myunghee;Amano, Hiroshi
我们报告的AlGaN基深紫外发光二极管（LED）的发射波长范围从255到280 nm取决于Al的有源区的组合物的制造和表征。LED被倒装芯片键合，并实现了超过3%的所有研究波长的外部量子效率。在连续波工作条件下，10 mA时的输出功率大于1 mW。在蓝宝石衬底的背面制作了一个蛾眼结构，晶片上的输出功率测量表明光提取提高了1.5倍。(C)2010日本应用物理学会
We report on the fabrication and characterization of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with the emission wavelength ranging from 255 to 280 nm depending on the Al composition of the active region. The LEDs were flip-chip bonded and achieved external quantum efficiencies of over 3% for all investigated wavelengths. Under cw operation, an output power of more than 1 mW at 10 mA was demonstrated. A moth-eye structure was fabricated on the back side of the sapphire substrate, and on-wafer output power measurement indicated a 1.5-fold improvement of light extraction. (C) 2010 The Japan Society of Applied Physics