Four-wave mixing and direct terahertz emission with two-color semiconductor lasers
Four-wave mixing and direct terahertz emission with two-color semiconductor lasers
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DOI：
10.1063/1.1737486
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发表时间：
2004-04
影响因子：
4
通讯作者：
S. Hoffmann;M. Hofmann;E. Bründermann;M. Havenith;M. Matus;J. Moloney;A. S. Moskalenko;M. Kira;S. W. Koch;S. Saito;K. Sakai
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文献类型：
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作者：
S. Hoffmann;M. Hofmann;E. Bründermann;M. Havenith;M. Matus;J. Moloney;A. S. Moskalenko;M. Kira;S. W. Koch;S. Saito;K. Sakai
我们在一个被配置为同时在两个波长上发射的半导体激光器中观察到了四波混频现象。四波混频边带存在的频率范围高达4太赫兹，这源于在两个激光模式的差频处对载流子等离子体的调制。此外，我们能够从激光器件自身在这个差频处产生并检测到可调谐的太赫兹辐射，这为一种可调谐太赫兹源提供了一种方案。
We have observed four-wave mixing in a semiconductor laser configured to emit on two wavelengths simultaneously. The four-wave mixing sidebands exist up to 4 THz stemming from a modulation of the carrier plasma at the difference frequency of the two laser modes. In addition, we were able to generate and detect tunable THz radiation at this difference frequency from the laser device itself suggesting a scheme for a tunable THz source.