Oxygen addition effects in synchrotron radiation excited etching using SF6
Oxygen addition effects in synchrotron radiation excited etching using SF6
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使用 SF6 的同步辐射激发蚀刻中的氧添加效应
DOI：
10.1116/1.585683
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发表时间：
1991
影响因子：
1.4
通讯作者：
T. Urisu
中科院分区：
文献类型：
--
作者：
Y. Utsumi;J. Takahashi;T. Urisu
研究了氧添加对SF6反应气体同步辐射刻蚀单晶硅、多晶硅和二氧化硅的影响。在没有氧气的情况下，观察到了两种唯象分类的反应机制：气相和表面激发机制。随着氧气的加入，气相激发机制消失，只有表面激发机制占优势。在使用多晶硅作为刻蚀掩模的SiO_2线和空间图形的微制造中，氧的添加是非常有效的。它的加入在SiO_2和晶态Si之间产生了高选择性。此外，还认为氧的加入消除了多晶硅表面产生的一些腐蚀抑制物质。
The effects of oxygen addition on the synchrotron radiation‐excited etching of crystal Si, poly‐Si, and SiO2 using SF6 reaction gas are investigated. Without oxygen, two phenomenologically classified reaction mechanisms are observed: gas phase and surface excitation mechanisms. With oxygen addition, the gas phase excitation mechanism disappears and only the surface excitation mechanism becomes dominant. Oxygen addition is extremely effective in the microfabrication of SiO2 line and space patterns using poly‐Si as an etching mask. Its addition creates high selectivity between SiO2 and crystal Si. Furthermore, it is considered that the added oxygen removes some etching suppressing species generated on the poly‐Si surface.