Tunneling in Graphene/h-BN/Graphene Heterostructures through Zero-Dimensional Levels of Defects in h-BN and Their Use as Probes to Measure the Density of States of Graphene
Tunneling in Graphene/h-BN/Graphene Heterostructures through Zero-Dimensional Levels of Defects in h-BN and Their Use as Probes to Measure the Density of States of Graphene
复制标题
通过六方氮化硼缺陷的零维水平在石墨烯/六方氮化硼/石墨烯异质结构中的隧道效应及其用作测量石墨烯态密度的探针
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
K. Novoselov
中科院分区：
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作者：
Y. Khanin;E. Vdovin;M. V. Grigor’ev;O. Makarovsky;M. Alhazmi;S. Morozov;S. Morozov;Artem Mishchenko;K. Novoselov
研究了h-BN在不同完善程度的石墨烯/h-BN/石墨烯异质结构中隧穿缺陷水平的演变，从完全缺陷到h-BN带隙中具有几十个缺陷水平。结果表明，这些能级的行为与Dirac点的运动以及石墨烯层在偏置电压和栅极电压变化时的化学势有关，这可以用理想无缺陷异质结构的静电模型来描述。石墨烯在磁场中的态密度已经通过单个缺陷水平的探测进行了研究，其灵敏度允许检测由B ~ 4 T的自旋和谷简并的提升引起的第零朗道能级的分裂。
The evolution of the manifestation of levels of defects in h-BN in tunneling through graphene/h-BN/graphene heterostructures with various degrees of perfection, from completely defectless to those with several tens of levels in the band gap of h-BN, has been studied. It has been shown that the behavior of these levels is related to the motion of Dirac points and the chemical potentials of graphene layers at change in the bias and gate voltages, which is described by the electrostatic model of an ideal defectless heterostructure. The density of states of graphene in a magnetic field has been studied by its probing by the level of a single defect with a sensitivity allowing the detection of splitting of the zeroth Landau level caused by the lifting of the spin and valley degeneracy already at B ∼ 4 T.