Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition
Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition
复制标题
脉冲激光沉积制备的掺钇氧化铪铁电薄膜的疲劳机理。
DOI：
10.1039/c6cp07501k
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发表时间：
2017-02-07
影响因子：
3.3
通讯作者：
Bi, Lei
中科院分区：
文献类型：
--
作者：
Huang, Fei;Chen, Xing;Bi, Lei
HfO2基铁电薄膜由于其优异的稳定性和CMOS兼容性，作为铁电随机存储器的候选材料受到了广泛关注。基于HfO2的铁电器件的主要可靠性问题是疲劳。到目前为止，对这种材料的疲劳机理的研究很少。在这里，我们报告了一个系统的研究钇掺杂氧化铪（HYO）铁电薄膜的疲劳机制的脉冲激光沉积。研究了脉冲宽度、脉冲幅度和温度对高压氧疲劳性能的影响。在不同的疲劳循环后的温度依赖性的导电机制的特征。在浅缺陷中心的载流子注入引起的畴壁钉扎被认为是该材料的主要疲劳机制。在90 °C下加热30 min后，疲劳器件可以完全恢复到无疲劳状态，证实了畴壁钉扎缺陷的浅陷阱特性。
Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.