HEAT FLOW IN THIN FILMS VIA SURFACE PHONON-POLARITONS
HEAT FLOW IN THIN FILMS VIA SURFACE PHONON-POLARITONS
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DOI：
10.5098/hmt.v1.2.3005
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发表时间：
2010-01-01
影响因子：
1.8
通讯作者：
Chen, Gang
中科院分区：
文献类型：
--
作者：
Chen, Dye-Zone A.;Chen, Gang
我们给出了沿极薄膜面内方向传播的热产生电磁通量的计算方法。该方法基于涨落电动力学和涨落耗散定理。我们发现，对于厚度在5 nm到100 nm之间的碳化硅薄膜，由于非对称表面声子-偏振子模的传播长度较长，较薄的薄膜传输更多的面内磁通。用涨落耗散方法和动量理论方法得到的结果进行了比较，结果令人满意。
We present a calculation of the thermally generated electromagnetic flux propagating along the in-plane direction of a polar, thin film. The approach is based on fluctuational electrodynamics and the fluctuation-dissipation theorem. We find that for silicon carbide films between 5 nm and 100 nm thick, the thinner films transport more in-plane flux due to the long propagation length of the anti-symmetric surface phonon-polariton mode. Comparison of results obtained from the fluctuation-dissipation approach and the kinetic theory approach shows favorable agreement.