Characterization of oxygen vacancies and their migration in Ba-doped Pb(Zr 0.52 Ti 0.48 )O 3 ferroelectrics
Characterization of oxygen vacancies and their migration in Ba-doped Pb(Zr 0.52 Ti 0.48 )O 3 ferroelectrics
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DOI：
10.1063/1.3055338
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发表时间：
2009-03
影响因子：
3.2
通讯作者：
M. F. Zhang;Y. Wang;K. F. Wang;Jinzhen Zhu;Junkai Liu
中科院分区：
文献类型：
--
作者：
M. F. Zhang;Y. Wang;K. F. Wang;Jinzhen Zhu;Junkai Liu
We investigate in detail the migration kinetics of oxygen vacancies (OVs) in Ba-doped Pb(Zr(0.52)Ti(0.48))O(3) (PZT) ferroelectrics by complex impedance spectroscopy. The temperature dependent dc-electrical conductivity sigma(dc) suggests that Ba doping into PZT can lower significantly the density of OVs, leading to the distinctly decreased sigma(dc) and slightly enhanced activation energy U for the migration of OVs, thus benefiting the polarization fatigue resistance. Furthermore, the polarization fluctuation induced by the relaxation of OVs is reduced by the Ba doping. The Cole-Cole fitting to the dielectric loss manifests strong correlation among OVs, and the migration of OVs appears to be a collective behavior.
