Relation between photoluminescence wavelength and lattice mismatch in metalorganic vapor-phase epitaxy InGaAs/InP
Relation between photoluminescence wavelength and lattice mismatch in metalorganic vapor-phase epitaxy InGaAs/InP
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金属有机气相外延InGaAs/InP光致发光波长与晶格失配的关系
DOI：
10.1063/1.352751
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发表时间：
1993
影响因子：
3.2
通讯作者：
A. Eisenbach
中科院分区：
文献类型：
--
作者：
E. Kuphal;A. Pöcker;A. Eisenbach
在室温 (RT) 下测量了高纯度 0.5 μm 厚金属有机气相外延 In1−xGaxAs/InP 的光致发光 (PL) 波长作为成分的函数。这些相干应变层的松弛失配介于 -0.25% 和 +0.13% 之间，对应于 x=0.503 – 0.448。使用四晶单色仪通过 X 射线衍射 (XRD) 测定成分。据报道，极窄的 XRD 线宽与层厚度有关。精确晶格匹配的 InGaAs 在室温下的 PL 峰值波长 λp 为 1668 nm，对应于带隙 Eg=731 meV。无应变 Eg(x) 关系的弯曲参数为 c=−0.494。测量的 λp 与 x 关系与通过应变能的静水部分校正的无应变 Eg(x) 非常吻合。从RT和77 K PL光谱的线形分析发现，应变层的光谱包含两条符合单轴应变下价带分裂的线。可靠测定的条件...
The photoluminescence (PL) wavelength of high‐purity 0.5‐μm‐thick metalorganic vapor‐phase epitaxy In1−xGaxAs/InP was measured at room temperature (RT) as a function of composition. The relaxed mismatch of these coherently strained layers was between −0.25% and +0.13%, corresponding to x=0.503 – 0.448. The composition was determined by x‐ray diffraction (XRD) using a four‐crystal monochromator. Extremely narrow XRD linewidths as a function of layer thickness are reported. The PL peak wavelength λp at RT of exactly lattice‐matched InGaAs is 1668 nm, corresponding to a band gap Eg=731 meV. The bowing parameter of the strain‐free Eg(x) relation is c=−0.494. The measured λp vs x relation agrees well with the strain‐free Eg(x) corrected by the hydrostatic part of the strain energy. From line‐shape analysis of RT and 77 K PL spectra it is found that the spectra of strained layers contain two lines in accordance with the valence band splitting under uniaxial strain. The conditions for a reliable determination of...