Growth and characterization of Sn-doped β-Ga2O3 thin films by chemical vapor deposition using solid powder precursors toward solar-blind ultraviolet photodetection
Growth and characterization of Sn-doped β-Ga2O3 thin films by chemical vapor deposition using solid powder precursors toward solar-blind ultraviolet photodetection
复制标题
使用固体粉末前驱体进行化学气相沉积的 Sn 掺杂 β-Ga2O3 薄膜的生长和表征，用于日盲紫外光电探测
DOI：
10.1016/j.apsusc.2019.144867
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发表时间：
2020-04-15
影响因子：
6.7
通讯作者：
Li, Xiu-Yan
中科院分区：
文献类型：
--
作者：
Fan, Ming-Ming;Lu, Ying-Jie;Li, Xiu-Yan
本研究选用稳定、固体、无毒的混合粉体（SnO 2、Ga 2 O3和石墨）作为前驱体，在传统的管式炉反应器中进行化学气相沉积，成功地制备了Sn掺杂的β-Ga 2 O3薄膜。随着Sn掺杂量的增加，薄膜的光学带隙明显从5.7eV左右移动到5.2eV左右。在50 V下，随着更多Sn的掺杂，金属-半导体-金属日盲紫外（UV）光电探测器的暗电流从0.04 pA增加到2.57 pA，沿着响应度从0.2 mA/W提高到80 mA/W，衰减时间从0.207 s减少到22 ms，这可归因于在晶界相关的传输过程中从较低的边界势垒的更快的传输时间。与采用昂贵的分子束外延技术制备的掺锡Ga 2 O3薄膜器件相比，我们的器件具有暗电流小、衰减时间快等优点，这为研究其在日盲紫外光探测器中的应用提供了一种廉价、简便的方法。
In this study, Sn-doped beta-Ga2O3 thin films were successfully grown by selecting stable, solid and nontoxic mixed powders (SnO2, Ga2O3 and graphite) as precursors during chemical vapor deposition in a cheap and traditional tube furnace reactor. By doping more Sn, optical bandgap of the films obviously shifted from similar to 5.7 eV to similar to 5.2 eV. At 50 V, the dark current of metal-semiconductor-metal solar-blind ultraviolet (UV) photodetectors increased from 0.04 pA to 2.57 pA as more Sn was doped, along with the improved responsivity from 0.2 mA/W to 80 mA/W and reduced decay time from 0.207 s to 22 ms, which may be ascribed to much faster transit time from lower boundary barrier in a grain-boundary related transport process. In comparison with the devices on Sn-doped Ga2O3 thin films by expensive MBE, our photodetectors with comparable responsivity show advantages of much lower dark current and faster decay time, which may provide a cheap and easy way to investigate their application for solar-blind UV photodetectors.