Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters
Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters
复制标题
用于测定深层参数的等温电容瞬态光谱
DOI：
10.1143/jjap.19.l335
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发表时间：
1980
影响因子：
1.5
通讯作者：
Y. Tokumaru
中科院分区：
文献类型：
--
作者：
H. Okushi;Y. Tokumaru
本文提出了一种新的半导体深能级测量方法，即在等温条件下测量电容的瞬态变化（等温电容瞬态谱）。该方法使我们能够通过可编程计算器构建精确的测量和分析系统。计算机模拟和实验的情况下，掺金硅的方法进行了演示。结果表明，该方法是半导体深能级光谱分析的有效工具之一。
A new measurement method for deep levels in semiconductors is proposed, by which the measurement of the transient change of capacitance is performed under an isothermal condition (Isothermal Capacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis system by a programmable calculator. Computer simulation and experiment by the method in the case of Au-doped Si are demonstrated. It is shown that the method is one of useful tools for spectroscopic analysis of deep levels in semiconductors.