The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals
The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals
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DOI：
10.1063/1.3698336
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发表时间：
2012-04
影响因子：
4
通讯作者：
Xinbo Yang;K. Fujiwara;N. Abrosimov;Raira Gotoh;J. Nozawa;H. Koizumi;A. Kwasniewski;S. Uda
中科院分区：
文献类型：
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作者：
Xinbo Yang;K. Fujiwara;N. Abrosimov;Raira Gotoh;J. Nozawa;H. Koizumi;A. Kwasniewski;S. Uda
杨鑫波感谢日本科学促进会（JSPS）博士后奖学金的资助。这项工作由日本内阁府通过其“下一代世界领先研究人员资助计划”部分资助。
Xinbo Yang gratefully acknowledges the Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for financial support. This work was partially funded by the Cabinet Office, Government of Japan through its “Funding Program for Next Generation World-Leading Researchers.”