Electronic properties of ZnO/CdS/Cu(In,Ga)Se2 solar cells aspects of heterojunction formation
Electronic properties of ZnO/CdS/Cu(In,Ga)Se2 solar cells aspects of heterojunction formation
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DOI：
10.1016/s0040-6090(00)01737-5
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发表时间：
2001-05-29
期刊：
影响因子：
2.1
通讯作者：
Schmidt, M
中科院分区：
文献类型：
--
作者：
Rau, U;Schmidt, M
本文简要综述了我们对ZnO/CDS/Cu(In，Ga)Se-2异质结器件中主要复合机制的认识现状。然后，我们讨论了异质界面和异质结伙伴的形成和电子结构如何影响吸收材料的电子性质，甚至影响到块体中的复合数量。我们研究了Cd和Cu扩散在结形成和完成的器件的空气退火过程中的作用。此外，我们还解释了本征氧化锌层在异质结中的作用，该异质结通常与化学浴沉积的硫化镉薄膜一起用于制备高效异质结太阳电池。我们认为，这些层防止了电不均匀主导整个器件的开路电压。两个二极管的简单并联模型表明，在没有缓冲层的情况下，0.1-5%的电子质量较差的电池面积会降低光伏性能，而对缓冲层几乎没有影响。(C)2001 Elsevier Science B.V.保留所有权利。
This contribution briefly reviews the present status of our knowledge on the dominant recombination mechanisms in ZnO/CdS/Cu(In,Ga)Se-2 heterojunction devices. Then we discuss the question how the formation and the electronic structure of the heterointerface and the heterojunction partners can influence the electronic properties and even the amount of recombination in the bulk of the absorber material. We examine the role of Cd- and Cu- diffusion during junction formation and air-annealing of the completed device. Furthermore, we explain the role of the intrinsic ZnO layer in the heterostructure routinely used together with a chemical bath deposited CdS layer to produce high efficiency heterojunction solar cells. We propose that these layers prevent electrical inhomogeneities from dominating the open circuit voltage of the entire device. A simple parallel connection model of two diodes demonstrates that 0.1-5% of the cell area with inferior electronic quality could degrade the photovoltaic performance without the buffer layer and have almost no consequences with the buffer layer. (C) 2001 Elsevier Science B.V. All rights reserved.