Increase in luminescence efficiency of GaPN layers by thermal annealing
Increase in luminescence efficiency of GaPN layers by thermal annealing
复制标题
通过热退火提高 GaPN 层的发光效率
DOI：
10.1002/pssc.200303346
复制
发表时间：
2003
期刊：
影响因子：
--
通讯作者：
K. Kuroki
中科院分区：
文献类型：
--
作者：
A. Utsumi;H. Yonezu;Y. Furukawa;K. Momose;K. Kuroki
研究了快速热退火（RTA）对GaPN层发光性能的影响。在GaP和Si衬底上生长了GaPN层。通过阴极发光和低温光致发光对其发光性能进行了评价。结果表明，经过RTA处理后，所有样品的发光强度均有所提高，峰值光子能量向高能侧偏移。GaPN层的发光强度随退火温度的升高而增大。研究还发现，高温RTA可以应用于生长在Si衬底上的GaPN层，而不是生长在GaP衬底上的GaPN层。估计高温RTA降低了氮元素组成的空间波动和氮原子缺陷的密度。（©2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
The effect of rapid thermal annealing (RTA) on the luminescence properties of GaPN layers was investigated. GaPN layers were grown on GaP and Si substrates. The luminescence properties were evaluated by cathodeluminescence and low-temperature photoluminescence. It was found that the luminescence intensity was increased and the peak photon energy was shifted to the high-energy side in all samples after RTA. The luminescence intensity of the GaPN layers was increased with increasing the annealing temperature. It was also found that high-temperature RTA can be applied to the GaPN layer grown on the Si substrate with a thin Si cap layer rather than the GaPN layer on the GaP substrate. It was estimated that high-temperature RTA reduces the spatial fluctuation of nitrogen compositions and the density of defects attributed to nitrogen atoms. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)