Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces
Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces
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DOI：
10.1063/1.4919803
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发表时间：
2015-06-01
期刊：
影响因子：
6.1
通讯作者：
Triscone, J. -M.
中科院分区：
文献类型：
--
作者：
Catalano, S.;Gibert, M.;Triscone, J. -M.
在(111)(PC)NdGaO_3衬底上生长的NdNiO_3薄膜在T=200K时发生了一级金属-绝缘体转变(MIT)和Neel转变。通过比较不同对称性和晶格参数的衬底上生长的NdNiO_3薄膜的输运和磁性质，我们发现在(111)(PC)表面上外延生长的NdNiO_3薄膜在T=335K和T=230K发生Neel转变。我们将这种效应归因于使用正交衬底时沿该方向施加的特定晶格匹配条件。(C)2015年作者(S)。除另有说明外，所有文章内容均按照知识共享署名3.0未移植许可进行许可。
Bulk NdNiO3 and thin films grown along the pseudocubic (001)(pc) axis display a 1st order metal to insulator transition (MIT) together with a Neel transition at T = 200 K. Here, we show that for NdNiO3 films deposited on (111)(pc) NdGaO3, the MIT occurs at T = 335 K and the Neel transition at T = 230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)(pc) surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.