The Electrothermal Large-Signal Model of Power MOS Transistors for SPICE
The Electrothermal Large-Signal Model of Power MOS Transistors for SPICE
复制标题
SPICE功率MOS晶体管的电热大信号模型
DOI：
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复制
发表时间：
2010
影响因子：
6.7
通讯作者：
K. Górecki
中科院分区：
文献类型：
--
作者：
J. Zarebski;K. Górecki
本文介绍了功率MOS晶体管的等温模型和作者提出的等温模型。文中还给出了两种模型的实验验证结果。
In this paper, the isothermal model of power MOS transistors offered by the producer of these devices and the electrothermal model of these devices proposed by the authors are presented. The results of experimental verification of both the models are given as well.