Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamics.
Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamics.
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DOI：
10.1364/oe.20.018585
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发表时间：
2012-08
期刊：
影响因子：
3.8
通讯作者：
Weiling Zhu;Yegang Lu;Simian Li;Zhitang Song;T. Lai
中科院分区：
文献类型：
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作者：
Weiling Zhu;Yegang Lu;Simian Li;Zhitang Song;T. Lai
利用相干声子谱研究了新型环境友好无Te非晶Ga-Sb-Se薄膜的飞秒激光辐照相变。当激光辐照功率达到一定阈值时，出现新的相干光学声子（COP），这意味着发生了激光诱导相变。COP动力学的泵浦功率依赖性揭示了晶化的相变和晶化质量与退火晶化相当，显示了Ga-Sb-Se薄膜在光学相变存储器中的应用潜力。研究了不同成分Ga-Sb-Se薄膜的激光辐照晶化。结果表明，Ga Sb Se薄膜的晶化阈值功率与Sb含量有关，表明Sb含量控制着Ga Sb Se薄膜的晶化温度。
Femtosecond laser-irradiation-induced phase change of new environment friendly Te-free amorphous Ga-Sb-Se films is studied by coherent phonon spectroscopy. New coherent optical phonons (COP) occur when laser irradiation power reaches some threshold, implying laser-induced phase change taken place. Pump power dependence of COP dynamics reveals the phase change as crystallization and crystallization quality is comparable to one of annealing crystallization, showing application potential of Ga-Sb-Se films in optical phase change memory. The laser-irradiated crystallization of different component Ga-Sb-Se films is studied. It is found crystallization threshold power depends on Sb content, implying Sb-content control of the crystallization temperature of Ga-Sb-Se films.