Formation of Ge0 and GeOx nanoclusters in Ge+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing
Formation of Ge0 and GeOx nanoclusters in Ge+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing
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DOI：
10.1016/j.apsusc.2015.05.090
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发表时间：
2015-09
影响因子：
6.7
通讯作者：
A. Zatsepin;D. Zatsepin;I. Zhidkov;E. Kurmaev;H. Fitting;B. Schmidt;A. Mikhailovich;K. Lawniczak-Jablonska
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文献类型：
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作者：
A. Zatsepin;D. Zatsepin;I. Zhidkov;E. Kurmaev;H. Fitting;B. Schmidt;A. Mikhailovich;K. Lawniczak-Jablonska
本文报道了Ge ~+注入SiO_2/Si异质结的X射线光电子能谱（XPS价带和芯能级）测量结果。这些异质结构具有30 nm厚的Ge+离子注入p型Si上的非晶SiO2层。讨论了Ge ~+离子注入和快速热退火（RTA）后基质-基质组分的化学态转变。进行的XPS分析可以得出结论，在研究中的样品内的Ge 0和GeOx团簇的形成。它是建立，退火时间强烈影响的程度的Ge原子的氧化态。
The results of X-ray photoelectron spectra (XPS valence band and core levels) measurements for Ge+implanted SiO2/Si heterostructures are presented. These heterostructures have a 30 nm thick Ge+ion implanted amorphous SiO2layer on p-type Si. The chemical-state transformation of the host-matrix composition after Ge+ion implantation and rapid thermal annealing (RTA) are discussed. The XPS-analysis performed allows to conclude the formation of Ge0and GeOxclusters within the samples under study. It was established, that the annealing time strongly affects the degree of oxidation states of Ge-atoms.