Implementation of Artificial Neural Networks Using Magnetoresistive Random-Access Memory-Based Stochastic Computing Units
Implementation of Artificial Neural Networks Using Magnetoresistive Random-Access Memory-Based Stochastic Computing Units
复制标题
使用基于磁阻随机存取存储器的随机计算单元实现人工神经网络
DOI:
10.1109/lmag.2021.3071084
复制
发表时间:
2021
影响因子:
1.2
通讯作者:
Amiri, Pedram Khalili
中科院分区:
文献类型:
--
作者:
Shao, Yixin;Sinaga, Sisilia Lamsari;Sunmola, Idris O.;Borland, Andrew S.;Carey, Matthew J.;Katine, Jordan A.;Lopez-Dominguez, Victor;Amiri, Pedram Khalili
Hardware implementation of artificial neural networks (ANNs) using conventional binary arithmetic units requires large area and energy, due to the massive multiplication and addition operations in the inference process, limiting their use in edge computing and emerging Internet of Things (IoT) systems. Stochastic computing (SC), where the probability of 1s and 0s in a randomly generated bit-stream is used to represent a decimal number, has been devised as an alternative for compact and low-energy arithmetic hardware, due to its ability to implement basic arithmetic operations using far fewer logic gates than binary operations. To realize SC in hardware, however, tunable true random-number generators (TRNGs) are needed, which cannot be efficiently realized using existing complementary metal-oxide-semiconductor complementary metal-oxide-semiconductor (CMOS) technology. In this letter, we address this challenge by using magnetic tunnel junctions (MTJs) as TRNGs, the stochasticity of which can be tuned by an electric current via spin-transfer torque. We demonstrate the implementation of ANNs with SC units, using stochastic bit-streams experimentally generated by a series of 50 nm perpendicular MTJs. The numerical value (1 to 0 ratio) of the bit-streams is tuned by the current through the MTJs via spin-transfer torque with an ultralow current of <;μA (= 0.25 MA·cm-2). The MTJ-based SC-ANN achieves 95% accuracy for handwritten digit recognition on the MNIST database. MRAM-based SC-ANNs provide a promising solution for ultra-low-power machine learning in edge, mobile, and IoT devices.
登录
查看更多内容
DOI:
--
发表时间:
2020
期刊:
影响因子:
--
作者:
D. Carvalho;R. Cruz
通讯作者:
R. Cruz
DOI:
--
发表时间:
2018
影响因子:
2.9
作者:
Aidyn Zhakatayev;Kyounghoon Kim;Kiyoung Choi;Jongeun Lee
通讯作者:
Jongeun Lee
DOI:
10.1109/iedm.2017.8268504
发表时间:
2017
期刊:
2017 IEEE International Electron Devices Meeting (IEDM)
影响因子:
--
作者:
Yang Lv;Jianping Wang
通讯作者:
Jianping Wang
影响因子:
4.6
作者:
J. Kaiser;A. Rustagi;Kerem Y Çamsarı;Jonathan Z. Sun;S. Datta;P. Upadhyaya
通讯作者:
P. Upadhyaya
影响因子:
1.2
作者:
Hassan, Orchi;Faria, Rafatul;Datta, Supriyo
通讯作者:
Datta, Supriyo