Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires

Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires
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Ge/Si核/壳纳米线中一维空穴的强且可调谐的自旋轨道耦合

DOI:
10.1021/nl101181e
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发表时间:
2010-08-01
期刊:
影响因子:
10.8
通讯作者:
Lu, Wei
Lu, Wei
中科院分区:
材料科学1区
文献类型:
--
作者:
Hao, Xiao-Jie;Tu, Tao;Lu, Wei

文献摘要

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We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of strong spin-orbit coupling. The temperature and back gate dependences of phase coherence length, spin-orbit relaxation time, and background conductance were studied. Specifically, we show that the spin orbit coupling strength can be modulated by more than five folds with an external electric held. These results suggest the Ge/Si nanowire system possesses strong and tunable spin-orbit interactions and may serve as a candidate for spintronics applications.