Electron transport properties in InAs four‐terminal ballistic junctions under weak magnetic fields
Electron transport properties in InAs four‐terminal ballistic junctions under weak magnetic fields
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DOI：
10.1002/pssc.200881538
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发表时间：
2009-06
期刊：
影响因子：
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通讯作者：
M. Koyama;K. Fujiwara;N. Amano;T. Maemoto;S. Sasa;M. Inoue
中科院分区：
文献类型：
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作者：
M. Koyama;K. Fujiwara;N. Amano;T. Maemoto;S. Sasa;M. Inoue
我们报告了在 InAs/AlGaSb 异质结构上制造的四端弹道结中磁场下基于弹道电子的电子传输特性。四端连接结构由两个纵向杆和两条与垂直轴倾斜30度的细线组成。通过弯曲电阻测量获得电子聚焦峰。然后研究了在细导线施加直流电时由于弹道电子引起的纵向茎之间电势差的非线性电子传输特性。观察到的非线性表现出明显的整流效应，无论输入电压极性如何，整流效应都具有负极性。尽管这种非线性由于磁场下的洛伦兹力而发生了质的变化，但当电流增加到更高强度时，观察到弹道效应对非线性特性的退化。 （© 2009 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We report on the electron transport properties based on ballistic electrons under magnetic fields in four-terminal ballistic junctions fabricated on an InAs/AlGaSb heterostructure. The four-terminal junction structure is composed of two longitudinal stems with two narrow wires slanted with 30 degree from the perpendicular axis. The electron focusing peak was obtained with the bend resistance measurement. Then it was investigated the nonlinear electron transport property of potential difference between longitudinal stems due to ballistic electrons with applying direct current from narrow wires. Observed nonlinearity showed clear rectification effects which have negative polarity regardless of input voltage polarity. Although this nonlinearity was qualitatively changed due to the Lorentz force under magnetic fields, the degradation of ballistic effects on nonlinear properties were observed when the current increased to higher strength. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)