Low-cost gate-oxide early-life failure detection in robust systems
Low-cost gate-oxide early-life failure detection in robust systems
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DOI：
10.1109/vlsic.2010.5560326
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发表时间：
2010-06
期刊：
影响因子：
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通讯作者：
Young Moon Kim;Y. Kameda;Hyunki Kim;M. Mizuno;S. Mitra
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文献类型：
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作者：
Young Moon Kim;Y. Kameda;Hyunki Kim;M. Mizuno;S. Mitra
我们提出了一种新的低成本检测栅氧化层早期故障(ELF)的技术，以克服健壮系统中的可靠性挑战，而不需要昂贵的并发错误检测。我们的方法是通过片上时钟控制技术实现的，该技术在周期性在线自检和诊断期间应用，在功能故障发生之前检测一段时间内的延迟移位。利用90 nm测试芯片，我们证明了以下关键结果：1.组合逻辑电路中的栅氧化层ELF晶体管在出现功能故障之前会随着时间的推移而产生延迟漂移。2.使用我们的片上时钟控制技术，可以在在线自检和诊断过程中成功地检测到延迟漂移。
We present a new low-cost technique for detecting gate-oxide early-life failures (ELF) to overcome reliability challenges in robust systems without requiring expensive concurrent error detection. Our approach is enabled by an on-chip clock control technique, applied during periodic on-line self-test and diagnostics, to detect delay shifts over time before functional failures occur. Using 90nm test chips, we demonstrate the following key results: 1. A gate-oxide ELF transistor inside a combinational logic circuit results in delay shifts over time before functional failures appear. 2. The delay shifts can be successfully detected during on-line self-test and diagnostics using our on-chip clock control technique.