Photolithographically Constructed Single ZnO Nanowire Device and Its Ultraviolet Photoresponse
Photolithographically Constructed Single ZnO Nanowire Device and Its Ultraviolet Photoresponse
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DOI：
10.2116/analsci.20n002
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发表时间：
2020-09-01
影响因子：
1.6
通讯作者：
Baba, Yoshinobu
中科院分区：
文献类型：
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作者：
Liu, Quanli;Yasui, Takao;Baba, Yoshinobu
在纳米线生长初期，通过控制晶种密度，合成了长径比约为120、生长速率为1µm/h的稀疏氧化锌纳米线阵列。空间分离的纳米线被从生长衬底上切下而没有断裂，因此在利用光刻技术构建单纳米线器件中是有用的。该器件表现出与氧化锌纳米线和电极之间的欧姆接触有关的线性电流-电压特性。该装置进一步证明了对紫外光照射具有可靠的光响应，I-UV/ID(方舟)接近100。
A sparse ZnO nanowire array with aspect ratio of ca. 120 and growth rate of 1 mu m/h was synthesized by controlling the density of seeds at the initial stage of nanowire growth. The spatially-separated nanowires were cut off from the growth substrate without breaking, and thus were useful in the construction of a single-nanowire device by photolithography. The device exhibited a linear current-voltage characteristic associated with ohmic contact between ZnO nanowire and electrodes. The device further demonstrated a reliable photoresponse with an I-UV/Id(ark) of similar to 100 to ultraviolet light irradiation.