Fe3O4/ZnO: A high-quality magnetic oxide-semiconductor heterostructure by reactive deposition
Fe3O4/ZnO: A high-quality magnetic oxide-semiconductor heterostructure by reactive deposition
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DOI：
10.1063/1.3540653
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发表时间：
2011-01
影响因子：
4
通讯作者：
M. Paul;D. Kufer-;A. Müller;S. Brück;E. Goering;M. Kamp;J. Verbeeck;H. Tian;G. V. Tendeloo;N. Ingle;M. Sing;R. Claessen
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文献类型：
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作者：
M. Paul;D. Kufer-;A. Müller;S. Brück;E. Goering;M. Kamp;J. Verbeeck;H. Tian;G. V. Tendeloo;N. Ingle;M. Sing;R. Claessen
我们通过使用分子氧作为氧化剂的简单反应沉积程序，演示了 Fe3O4 薄膜在 ZnO 上的外延生长。 X 射线光电子能谱结果证明氧化铁表面几乎是化学计量的磁铁矿。 X射线衍射结果表明单晶外延和几乎完全的结构弛豫。扫描透射电子显微照片显示，微观结构由反相边界或孪晶边界分隔的区域组成。与块状晶体相比，磁铁矿薄膜表现出相当慢的磁化行为，这可能是由于在小施加场中反相边界处的磁化强度降低。
We demonstrate the epitaxial growth of Fe3O4 films on ZnO by a simple reactive deposition procedure using molecular oxygen as an oxidizing agent. X-ray photoelectron spectroscopy results evidence that the iron-oxide surface is nearly stoichiometric magnetite. X-ray diffraction results indicate monocrystalline epitaxy and almost complete structural relaxation. Scanning transmission electron micrographs reveal that the microstructure consists of domains which are separated by antiphase boundaries or twin boundaries. The magnetite films show rather slow magnetization behavior in comparison with bulk crystals probably due to reduced magnetization at antiphase boundaries in small applied fields.