High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers
High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers
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DOI：
10.1063/5.0027729
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发表时间：
2020-12-28
影响因子：
4
通讯作者：
Umezawa, Hitoshi
中科院分区：
文献类型：
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作者：
Hanada, Takanori;Ohmagari, Shinya;Umezawa, Hitoshi
我们用半英寸半绝缘金刚石(100)晶片制作了金刚石准垂直肖特基势垒二极管。大多数二极管表现出较大的整流比(>；10(10))，在5V(0.6 MV cm(-1))的反向偏置下检测不到漏电流，只有2%的二极管表现出欧姆式漏电流。在肖特基势垒二极管下观察到表面缺陷，并利用Murphy模型和相关因子分析了表面缺陷对电学性质的影响。我们发现，大多数晶体缺陷(表面丘)是非电活性的，非外延晶体和与工艺相关的场板裂纹是导致大泄漏电流的主要缺陷。没有这种致命缺陷的肖特基势垒二极管显示出接近5 mV cm(-1)的高电场强度。
We fabricated diamond pseudo-vertical Schottky barrier diodes using a half-inch semi-insulative diamond (100) wafer. Most diodes exhibited a large rectifying ratio (>10(10)) with undetectable leakage current at a reverse bias of 5V (0.6MV cm(-1)), with only 2% of diodes exhibiting an Ohmic-like leakage current. Surface defects were observed under the Schottky barrier diode, and their impacts on electrical properties were analyzed using a Murphy model and correlation factor analysis. We found that most crystalline defects (surface hillocks) were electrically non-active and that non-epitaxial crystallites and process-related field-plate cracks were the main defects that induced a large leakage current. Schottky barrier diodes without such killer defects showed a high electric field strength of similar to 5MV cm(-1).