Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films
Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films
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DOI：
10.7567/apex.6.021001
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发表时间：
2013-02
影响因子：
2.3
通讯作者：
Yuewei Zhang;Xinqiang Wang;Xiantong Zheng;Guang Chen;D. Ma;F. Xu;N. Tang;W. Ge;B. Shen
中科院分区：
文献类型：
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作者：
Yuewei Zhang;Xinqiang Wang;Xiantong Zheng;Guang Chen;D. Ma;F. Xu;N. Tang;W. Ge;B. Shen
报道了具有两种晶格极性的InN层的输运性质。认为晶界对电子形成势垒，从而导致电子迁移率降低。然而，这些晶界只在N-极性InN薄膜中是重要的散射中心，而在无极性InN薄膜中不是，这与N-极性InN表面的颗粒特征相一致。室温下，样品晶界的载流子迁移率约为75cm2·V~(-1)·S~(-1)，远低于晶界中的载流子迁移率。
Transport properties of InN layers with both lattice polarities are reported. It is proposed that grain boundaries form potential barriers for electrons and thus lead to a reduction of electron mobility. However, these grain boundaries are important scattering centers only in the N-polarity InN films, but not in the In-polarity ones, which is consistent with the grain feature of the N-polarity InN surfaces. The carrier mobility in grain boundaries is estimated to be about 75 cm2 V-1 s-1 at room temperature for our sample, far less than the carrier mobility in the grains.