Photoacoustic and photoluminescence studies of porous silicon etched by low-concentration hydrofluoric acid
Photoacoustic and photoluminescence studies of porous silicon etched by low-concentration hydrofluoric acid
复制标题
低浓度氢氟酸蚀刻多孔硅的光声和光致发光研究
DOI：
10.1063/1.1289220
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发表时间：
2000
影响因子：
3.2
通讯作者：
Q. Shen
中科院分区：
文献类型：
--
作者：
T. Toyoda;T. Takahashi;Q. Shen
我们应用光声（PA）、光致发光（PL）、光致发光激发（PLE）和原子力显微镜（AFM）技术对多孔硅（PS）层进行了低浓度氢氟酸化学蚀刻的研究。化学蚀刻通过原子力显微镜观察揭示了小尺寸PS层的形成，表明存在强量子约束效应的可能性。PA光谱有助于获得PS等强散射介质的光学吸收特性，并通过化学蚀刻表明PS层基本吸收边的蓝移，有助于证实上述推测。通过化学蚀刻揭示PS层的强强度和蓝移，PL光谱也证实了量子约束效应的可能性。PLE测量表明，辐射过程的位置与载流子复合的位置不同，PS层的PL仅由小的…
We applied photoacoustic (PA), photoluminescence (PL), photoluminescence excitation (PLE), and atomic force microscopy (AFM) techniques on porous silicon (PS) layers to study the influence of chemical etching by low-concentration hydrofluoric acid. The chemical etching reveals the formation of PS layers of small dimensions by AFM observations, indicating the possibility of a strong quantum confinement effect. PA spectroscopy is useful to obtain the optical absorption characteristic for strongly scattering media such as PS and it helps to confirm the above speculation by indicating the blueshift of the fundamental absorption edge for the PS layer with chemical etching. PL spectroscopy also confirms the possibility of a quantum confinement effect by revealing the strong intensity and blueshift for the PS layer with chemical etching. PLE measurements suggest that the site for the radiative processes is different from that for the recombination of carriers and the PL of PS layers were dominated only by small ...