Nyquist noise of cell adhesion detected in a neuron-silicon transistor
Nyquist noise of cell adhesion detected in a neuron-silicon transistor
复制标题
DOI：
10.1103/physrevlett.96.228102
复制
发表时间：
2006-06-09
影响因子：
8.6
通讯作者：
Fromherz, Peter
中科院分区：
文献类型：
--
作者：
Voelker, Moritz;Fromherz, Peter
神经细胞和场效应晶体管的接口由沿着细胞-芯片连接处的电阻的电流决定。我们通过使用低噪声晶体管测量细胞外电压的波动来研究结的热噪声。我们发现频谱功率密度为 5x10(-14) V-2/Hz，并将其解释为电阻为 3 MOhm 的电池芯片结的奈奎斯特噪声。热噪声使我们能够阐明细胞粘附的特性，并且它为神经电子接口的信噪比设定了热力学极限。
Interfacing of nerve cells and field-effect transistors is determined by current flow along the electrical resistance of the cell-chip junction. We study the thermal noise of the junction by measuring the fluctuations of extracellular voltage with a low-noise transistor. We find a spectral power density of 5x10(-14) V-2/Hz and interpret it as Nyquist noise of the cell-chip junction with a resistance of 3 MOhm. The thermal noise allows us to elucidate the properties of cell adhesion and it sets a thermodynamical limit for the signal-to-noise ratio of neuroelectronic interfacing.