Structural and Electrical Properties of Flexible ITO/In2O3 Thermocouples on PI Substrates under Tensile Stretching
Structural and Electrical Properties of Flexible ITO/In2O3 Thermocouples on PI Substrates under Tensile Stretching
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DOI：
10.1021/acsaelm.9b00103
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发表时间：
2019-07-01
影响因子：
4.7
通讯作者：
Zhang, Junzhan
中科院分区：
文献类型：
--
作者：
Shi, Peng;Wang, Weichao;Zhang, Junzhan
现代科学技术的发展对温度传感器提出了更方便、更准确的温度测量要求，尤其是对柔性设备的温度测量。为解决这一问题，现场测温技术得到了广泛的研究。本工作采用射频磁控溅射法在聚酰亚胺衬底上沉积了In_2O_3和ITO薄膜，形成了透明的柔性薄膜热电偶。在拉伸实验中，研究了In_2O_3和ITO薄膜的各种透过率、表面形貌和电阻。随着拉伸应变的增加，两种电极膜的电阻都以不同的方式增加。In_2O_3/ITO柔性薄膜热电偶经0.7968%应变拉伸后仍保持良好的热电响应和较高的塞贝克系数。然后，用有限元模拟方法计算了In_2O_3和ITO薄膜的结合韧性，研究了裂纹的萌生和扩展机制。In_2O_3/ITO柔性薄膜热电偶的制备工艺简单，热电响应好，在电子元件和可穿戴设备的原位温度传感方面具有广阔的应用前景。
The development of modern science and technology poses a challenge to temperature sensors for more convenient and accurate temperature measuring, especially for flexible devices. The insitu temperature measurement technique has been extensively studied to solve this problem. In this work, In2O3 and ITO thin films were deposited on polyimide substrates to form transparent flexible thin film thermocouples by radio-frequency magnetron sputtering. A variety of transmissions, surface morphologies, and resistances of In2O3 and ITO films were investigated during tensile experiments. The increasing tensile strain leads to an increase in the resistance of the two kinds of electrode films in different ways. The In2O3/ITO flexible thin film thermocouples still keep good thermoelectric response and high Seebeck coefficient after the tensile test with an applied strain up to 0.7968%. Whereafter, the finite element simulation method was employed to calculate the cohesive toughness of In2O3 and ITO films to investigate the mechanism of crack initiation and propagation. The facile preparation processing and good thermoelectric response of the In2O3/ITO flexible thin film thermocouples made them a promising candidate in the application of in-situ temperature sensing in electronic components and wearable devices.