Fabrication of Site‐Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures
Fabrication of Site‐Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures
复制标题
通过在 Ga(AsN)/GaAs 异质结构中空间选择性掺入氢来制造位点控制量子点
DOI：
10.1002/adma.201004703
复制
发表时间：
2011
影响因子：
29.4
通讯作者：
J. Maan
中科院分区：
文献类型：
--
作者：
R. Trotta;A. Polimeni;F. Martelli;G. Pettinari;M. Capizzi;L. Felisari;S. Rubini;M. Francardi;A. Gerardino;P. Christianen;J. Maan
对半导体量子点（QD）的尺寸、密度和定位的完全控制在许多潜在器件中是期望的。这种控制很难通过依赖于随机自组装的自下而上的方法来实现。[ 1，2 ]相反，大量的处理和再生长步骤，纳米结构的小密度以及表面附近的载流子耗尽通常是自上而下方法的缺点。[第3-5页]
Full control over size, density, and positioning of semiconductor quantum dots (QDs) is desirable in numerous potential devices. This control is diffi cult to attain by bottom-up methods that rely on random self-assembly. [ 1 , 2 ] Conversely, a high number of processing and regrowth steps, a small density of nanostructures, and carrier depletion near surfaces are often drawbacks of top-down approaches. [ 3–5 ]
影响因子：
10.8
作者：
Htoon H;Malko AV;Bussian D;Vela J;Chen Y;Hollingsworth JA;Klimov VI
通讯作者：
Klimov VI