Electronic mechanism for refractive-index changes in intensively pumped Yb:YAG laser crystals.
Electronic mechanism for refractive-index changes in intensively pumped Yb:YAG laser crystals.
复制标题
强泵浦 Yb:YAG 激光晶体折射率变化的电子机制。
作者：
O. Antipov;D. V. Bredikhin;O. Eremeykin;A. Savikin;E. Ivakin;A. Sukhadolau
本文用高灵敏度偏振干涉仪和633 nm瞬态光栅测试方法研究了Yb：YAG激光器中Yb ~（3+）离子在强激光二极管和强激光泵浦下的折射率随Yb ~（3+）离子电子能级布居数的变化。由于Yb 3+离子（其具有基态2F 7/2和激发能级2F 5/2的不同极化率）的激发而引起的折射率的电子变化强烈地主导于热分量。在干涉和瞬态光栅实验中，在633 nm处测量的极化率差分别为deltap（1.9 +/- 0.8）× 10（-26）和（1.95 +/- 0.25）× 10（-26）cm 3。
Refractive-index changes accompanying changes in population of electronic levels of Yb3+ ions in a Yb:YAG laser disk under intense diode and laser pumping have been studied by use of both a highly sensitive polarization interferometer and transient grating testing at 633 nm. The electronic change of the index that is due to excitation of the Yb3+ ions (which have different polarizability of ground state 2F7/2 and excited level 2F5/2) is strongly predominant over the thermal component. The polarizability differences are deltap (1.9 +/- 0.8) x 10(-26) and (1.95 +/- 0.25) x 10(-26) cm3 as measured at 633 nm in interferometric and transient grating experiments, respectively.