Standardizing large format 5" GaSb and InSb substrate production
Standardizing large format 5" GaSb and InSb substrate production
复制标题
DOI：
10.1117/12.2263961
复制
发表时间：
2017-02
影响因子：
4.1
通讯作者：
B. Martinez;J. P. Flint;G. Dallas;B. Smith;M. Tybjerg;S. Aravazhi;M. J. Furlong
中科院分区：
文献类型：
--
作者：
B. Martinez;J. P. Flint;G. Dallas;B. Smith;M. Tybjerg;S. Aravazhi;M. J. Furlong
在本文中，我们报告的成熟的大直径GaSb和InSb衬底生产和产品质量和工艺控制的关键方面，使标准化水平，以达到与大规模生产的化合物半导体材料，如GaAs和InP。锑化物衬底的晶体生长、晶片化和外延准备抛光的商业生产工艺的演变将与具体参考工艺工具集和生产方法一起讨论，这些工艺工具集和生产方法已经将利基材料转变为晶圆级产品质量、一致性和控制设定了新标准的材料。将介绍用改进的直拉法（LEC）生产大于或等于6英寸的单晶锭的结果。晶体缺陷测绘将证明，行业标准的InSb（211）生长工艺已得到改进，以始终如一地提供超低位错密度的衬底。将提供大幅面5”外延准备精加工工艺的统计过程控制数据，并与GaAs和InP的内部数据进行比较。各种表面分析工具用于表征5”InSb和GaSb衬底，并讨论了我们为每个衬底提供独特表征“指纹”的方法。我们的结论是，InSb和GaSb产品质量和一致性的改善一直是由行业的持续需要，以提高器件的性能和产量。虽然锑化物晶片生产中对衬底尺寸的要求可能已经达到顶峰，但我们将讨论如何在相对较短的时间内实现衬底直径的下一步，即6”。
In this paper we report on the maturation of large diameter GaSb and InSb substrate production and the key aspects of product quality and process control that have enabled a level of standardization to be achieved that is on par with mass produced compound semiconductor materials such as GaAs and InP. The evolution of commercial production processes for the crystal growth, wafering and epitaxy-ready polishing of antimonide substrates will be discussed together with specific reference to the process tool sets and production methodologies that have transformed a niche material in to one that has set new standards for wafer level product quality, conformity and control. Results will be presented on the production of single crystal >/=6” ingots grown by a modified version of the Czochralski (LEC) technique. Crystal defect mapping will demonstrate that industry standard InSb (211) growth processes have been refined to consistently deliver ultralow dislocation density substrates. Statistical process control data will be presented for large format 5” epitaxy ready finishing processes and compared alongside in-house data for GaAs and InP. Various surface analytical tools are used to characterize 5” InSb and GaSb substrates and our method of providing a unique characterization ‘finger print’ with each substrate discussed. We conclude that improvements in InSb and GaSb product quality and consistency have been driven by the industry’s persistent need to improve device performance and yield. Whilst substrate size requirements in antimonide wafer production may have peaked, we will discuss how to moving to the next step in substrate diameters, 6”, is very attainable and within relatively short timescales too.