Selective growth of Zn- and O-polar ZnO layers by plasma-assisted molecular beam epitaxy
Selective growth of Zn- and O-polar ZnO layers by plasma-assisted molecular beam epitaxy
复制标题
DOI：
10.1116/1.1861932
复制
发表时间：
2005-06
影响因子：
1.4
通讯作者：
T. Minegishi;JungHoon Yoo;Hideyuki Suzuki;Z. Vashaei;K. Inaba;K. Shim;T. Yao
中科院分区：
文献类型：
--
作者：
T. Minegishi;JungHoon Yoo;Hideyuki Suzuki;Z. Vashaei;K. Inaba;K. Shim;T. Yao
仅通过改变 MgO 缓冲层厚度即可成功控制在 MgO∕c-Al2O3 模板上生长的 ZnO 薄膜的极性。当MgO缓冲层厚度小于2.7nm时，c-Al2O3上的MgO缓冲层的晶体结构为纤锌矿(WZ)。随着 MgO 层厚度超过，MgO 的晶体结构变为岩盐（RS）结构。在 WZ-MgO 上生长的 ZnO 层产生 O 极性 ZnO，而在 RS-MgO 上生长的 ZnO 层的极性变为 Zn 极性。建议了 ZnO∕MgO∕Al2O3 界面结构的可能原子构型。
The polarity of ZnO films grown on MgO∕c-Al2O3 templates are successfully controlled by only varying MgO buffer layer thickness. The crystal structure of the MgO buffer on c-Al2O3 is of wurtzite (WZ), when the MgO buffer thickness is less than 2.7nm. As the MgO layer thickness exceeds, the crystal structure of MgO changes to rock salt (RS) structure. A ZnO layer grown on WZ-MgO results in O-polar ZnO, while the polarity of the ZnO layer grown on RS-MgO changes to Zn polar. Possible atomic configurations of the ZnO∕MgO∕Al2O3 interface structure are suggested.