A new light trapping TCO for nc-Si:H solar cells
A new light trapping TCO for nc-Si:H solar cells
复制标题
DOI：
10.1016/j.solmat.2005.09.018
复制
发表时间：
2006-11
影响因子：
6.9
通讯作者：
J. Selvan;A. Delahoy;Sheyu Guo;Yuanmin Li
中科院分区：
文献类型：
--
作者：
J. Selvan;A. Delahoy;Sheyu Guo;Yuanmin Li
介绍了一种新型的无自由载流子吸收的透明导电光陷结构。用空心阴极溅射法制备的掺钼氧化铟（IMO）具有很高的载流子迁移率，可达80 cm ~ 2/Vs，在近红外区没有自由载流子吸收。然而，该上级长波长透明性对于薄膜Si太阳能电池应用是不够的。为了获得尽可能高的短路电流，TCO需要具有额外的光捕获结构。纤维织构取向的ZnO的各向异性蚀刻已被证明导致有效的光捕获结构。在这里，我们提出了一个双层结构，由光捕获本征ZnO和IMO（ZnO/IMO双层）。这两个层显示出低的自由载流子吸收高达1200 nm的波长。我们证明了使用这样的透明导电光捕获氧化物（TCLO）在纳米晶（nc-Si：H）太阳能电池制造的单室，批量型PECVD工艺。与平坦双层相比，引入这种透明导电光捕获双层可以使太阳能电池短路电流密度（Jsc）增加>30%。
A new transparent conducting light trapping structure with no free carrier absorption for solar cells is described. Indium oxide doped with molybdenum (IMO), prepared by the hollow cathode sputtering technique, exhibits high charge-carrier mobility up to 80cm2/Vs. No free-carrier absorption in the near infrared region has been found in the IMO. The superior long-wavelength transparency, however, is not sufficient for thin film Si solar cell applications. To obtain the highest possible short circuit current, the TCO needs to possess additional light trapping structure. Anisotropic etching of fiber texture oriented ZnO has been shown to result in an effective light trapping structure. Here we propose a bilayer structure that consists of light trapping-intrinsic ZnO and IMO (the ZnO/IMO bilayer). Both layers show low free-carrier absorption up to the wavelength of 1200nm. We demonstrate the use of such a transparent conducting light trapping oxide (TCLO) in nanocrystalline (nc-Si:H) solar cells fabricated by a single chamber, batch-type PECVD process. Incorporation of such a transparent conducting light trapping bilayer can increase solar cell short-circuit current density (Jsc) by >30% compared to flat bilayers.