Epitaxial Growth of Ruby Crystal Films on Sapphire Crystal Substrates and Solubility of Aluminum Oxide in Molybdenum Trioxide Flux
Epitaxial Growth of Ruby Crystal Films on Sapphire Crystal Substrates and Solubility of Aluminum Oxide in Molybdenum Trioxide Flux
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DOI：
10.1021/acs.cgd.9b00483
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发表时间：
2019-07-01
影响因子：
3.8
通讯作者：
Teshima, Katsuya
中科院分区：
文献类型：
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作者：
Ayuzawa, Shunsuke;Suzuki, Sayaka;Teshima, Katsuya
首次利用三氧化钼(MoO_3)助熔剂在蓝宝石(Al_2O_3)晶体衬底上外延生长了红宝石(Al_2O_3：Cr)晶体薄膜。通过在1100℃下加热放置在蓝宝石晶体衬底上的助熔剂1200分钟来生长晶体薄膜。由此获得的薄膜呈红色，厚度约为200微米。根据X射线衍射和电子背散射衍射分析数据，发现晶体薄膜的晶体取向与衬底晶体相同。在(0001)基板面上形成具有(0001)面的红宝石晶体薄膜，在(11(2)面上)基板面上形成具有(11(2))面的膜。此外，通过测量基质的质量损失和红宝石晶体结晶时蒸发的助熔剂的量，估算出在1100℃时，Al_2O_3在助熔剂中的溶解度约为9.6%。
Ruby (Al2O3:Cr) crystal films were, for the first time, epitaxially grown on sapphire (Al2O3) crystal substrates via the evaporation of molybdenum trioxide (MoO3) flux. The crystal films were grown by heating the flux placed on the sapphire crystal substrates at 1100 degrees C for 1200 min. The films thus obtained exhibited a red color and were approximately 200 mu m in thickness. Based on the X-ray diffraction and electron backscatter diffraction analyses data, the crystallographic orientation of the crystal films was found to be the same as that of the substrate crystals. A ruby crystal film with a (0001) face developed on the (0001) substrate face, and a film with a (11 (2) over bar0) face developed on the (11 (2) over bar0) substrate face. In addition, the solubility of Al2O3 in the flux at 1100 degrees C was estimated to be approximately 9.6 mol % by measuring the mass loss of the substrate and the amount of evaporated flux when the crystallization of the ruby crystals occurred.