Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H-and 6H-SiC
Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H-and 6H-SiC
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DOI：
10.1063/1.1366660
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发表时间：
2001-06-01
影响因子：
3.2
通讯作者：
Itoh, KM
中科院分区：
文献类型：
--
作者：
Iwata, H;Itoh, KM
基于低场输运模型，对4 H-SiC和6 H-SiC中的电子霍尔迁移率和霍尔散射因子进行了理论计算。我们的迁移率计算作为温度、净掺杂浓度（[N-D]-[N-A]）和补偿比（[N-A]/[N-D]）的函数，其中N-D和N-A分别是施主（氮）和受主浓度，提供了高质量SiC晶体所期望的电子霍尔迁移率的理论值。结果可用于评价给定SiC样品的结晶质量。我们还提出了霍尔和漂移迁移率的比率，即，霍尔散射因子，其需要在实验测量的霍尔迁移率和使用例如蒙特卡罗模拟的理论计算的漂移迁移率之间建立桥梁。我们对电子霍尔迁移率和霍尔散射因子的计算与实验结果符合得很好。(C)2001年美国物理学会。
Theoretical calculation of the electron Hall mobility and the Hall scattering factor in 4H- and 6H-SiC is performed based on the low-field transport model. Our mobility calculation as a function of temperature, net-doping concentration ([N-D]-[N-A]), and compensation ratio ([N-A]/[N-D]), where N-D and N-A are the donor (nitrogen) and acceptor concentrations, respectively, provides the theoretical values of the electron Hall mobility expected for the high quality SiC crystal. The results can be used for the evaluation of the crystalline quality of a given SiC sample. We also present the ratio of the Hall and drift mobility, i.e., the Hall scattering factor, which is needed to make a bridge between the experimentally measured Hall mobility and the theoretically calculated drift mobility using, for example, Monte Carlo simulation. Our calculations of both the electron Hall mobility and the Hall scattering factor are in very good agreement with the experimental results. (C) 2001 American Institute of Physics.