Growth of SiO2 at room temperature with the use of catalyzed sequential half-reactions
Growth of SiO2 at room temperature with the use of catalyzed sequential half-reactions
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DOI：
10.1126/science.278.5345.1934
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发表时间：
1997-12-12
期刊：
影响因子：
56.9
通讯作者：
George, SM
中科院分区：
文献类型：
--
作者：
Klaus, JW;Sneh, O;George, SM
采用催化二元反应序列化学法在室温下沉积了二氧化硅薄膜。将SiCl_4 + 2 H（2）O --> SiO_2 + 4 HCl二元反应分解为SiCl_4和H_2 O两个半反应，然后在ABAB反应器中进行。顺序并用吡啶催化。吡啶催化剂将沉积温度从>600开尔文降低到300开尔文，并将完全反应所需的反应物通量从近似10（9）朗缪尔降低到近似10（4）朗缪尔。在室温下，对于15毫托的反应物压力和60秒的暴露时间，用200毫托的吡啶，获得了类似于2.1埃/AB反应循环的生长速率。该催化技术可以是通用的，并且应当促进其它氧化物和氮化物材料的化学气相沉积。
Films of silicon dioxide (SiO2) were deposited at room temperature by means of catalyzed binary reaction sequence chemistry. The binary reaction SiCl4 + 2H(2)O --> SiO2 + 4HCl was separated into SiCl4 and H2O half-reactions, and the half-reactions were then performed in an ABAB ... sequence and catalyzed with pyridine. The pyridine catalyst lowered the deposition temperature from >600 to 300 kelvin and reduced the reactant flux required for complete reactions from similar to 10(9) to similar to 10(4) Langmuirs. Growth rates of similar to 2.1 angstroms per AB reaction cycle were obtained at room temperature for reactant pressures of 15 millitorr and 60-second exposure times with 200 millitorr of pyridine. This catalytic technique may be general and should facilitate the chemical vapor deposition of other oxide and nitride materials.