Thermal and nonthermal melting of gallium arsenide after femtosecond laser excitation
Thermal and nonthermal melting of gallium arsenide after femtosecond laser excitation
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DOI：
10.1103/physrevb.58.r11805
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发表时间：
1998-11-01
影响因子：
3.7
通讯作者：
von der Linde, D
中科院分区：
文献类型：
--
作者：
Sokolowski-Tinten, K;Bialkowski, J;von der Linde, D
用时间分辨显微技术研究了飞秒激光激发后砷化镓的热熔化和非热熔化。在相当强的激发下，在几百飞秒内观察到电子熔化，数据显示这个非热过程的明显阈值为150 mJ/cm(2)。低于这个阈值，熔化发生在100ps的时间尺度上，属于热性质。我们用一个简单的数值模型将这种相变描述为在强烈过热条件下的非均相熔化。[s0163 - 1829(98) 51142 - 3]。
Thermal- and nonthermal melting in gallium arsenide after femtosecond laser excitation has been investigated by means of time resolved microscopy. Electronic melting within a few hundred femtoseconds is observed for rather strong excitation and the data reveal a distinct threshold fluence of 150 mJ/cm(2) for this nonthermal process. Below that threshold melting occurs on a 100 ps time scale and is of thermal nature. Using a simple numerical model we describe this type of the phase transition as heterogeneous melting under strongly overheated conditions. [S0163-1829(98)51142-3].