Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H2O using large-signal photovoltage pulses
Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H2O using large-signal photovoltage pulses
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DOI：
10.1088/0022-3727/12/6/016
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发表时间：
1979-06
期刊：
影响因子：
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通讯作者：
K. Heilig;H. Flietner;J. Reineke
中科院分区：
文献类型：
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作者：
K. Heilig;H. Flietner;J. Reineke
结果表明，场调制的大信号光电压提供了一定的方法优势相比，其他方法更频繁地用于确定表面态分布。描述了仪器和样品制备。本文研究了经HF处理和水冲洗100 h以上的真实的硅表面禁带中快态的分布。虽然冲洗时间短的最低浓度为3*1012状态cm-2 eV-1被发现，长时间冲洗导致一个“固有的”分布，其中的浓度在最低值是低的一个因素的十。结果进行了比较，最近在热氧化硅。对于真实的和氧化的硅表面，将表面态有意义地分成三组不同的物理起源是可能的。氟化作为一个可能的原因，非本征表面状态，模型描述的本征状态，最后，有关半导体器件技术的某些方面进行了讨论。
It is shown that the field-modulated large-signal photovoltage offers definite methodological advantages in comparison to other methods more frequently used for the determination of surface state distribution. Apparatus and sample preparations are described. The distribution of fast states in the forbidden gap at real silicon surfaces was studied after treatment in HF and rinsing in H2O up to times in excess of 100 h. Whilst for short rinsing times minimum concentrations of 3*1012 states cm-2 eV-1 were found, prolonged rinsing led to an 'intrinsic' distribution where the concentration in the minimum was lower by a factor of ten. The results are compared with those recently obtained at thermally oxidised silicon. A meaningful separation of surface states into three groups of different physical origin is possible both for real and for oxidised silicon surfaces. Fluoridation as a probable cause of extrinsic surface states, model descriptions of intrinsic states and, finally, certain aspects concerning semiconductor device technology are discussed.