Electron-beam direct writing using RD2000N for fabrication of nanodevices
Electron-beam direct writing using RD2000N for fabrication of nanodevices
复制标题
使用 RD2000N 电子束直写技术制造纳米器件
DOI：
10.1116/1.1323969
复制
发表时间：
2000
影响因子：
1.4
通讯作者：
S. Oda
中科院分区：
文献类型：
--
作者：
A. Dutta;Sangyeop Lee;Y. Hayafune;S. Oda
介绍了一种简单而有效的电子束直写方法。这种方法是基于使用负性电子束抗蚀剂RD 2000 N。该抗蚀剂提供了对EB曝光的高灵敏度和对卤化物等离子体蚀刻条件的高耐受性，这对于基于Si/SiO2的纳米器件制造中的应用是理想的。点曝光表明，使用该抗蚀剂可以图案化最小直径为16 nm的点。使用这种抗蚀剂形成点的线性阵列，这些点通过非常窄的收缩彼此连接。当通过反应离子蚀刻转移到薄的绝缘体上硅层时，该结构形成多隧道结。制造了基于这种多隧道结的存储器器件。在20 K下观察到存储器操作。
A simple but potent method for electron-beam (EB) direct writing is introduced. This method is based on the use of negative electron-beam resist RD2000N. The resist offers high sensitivity to EB exposure and high resistance to halide plasma etching conditions, which is ideal for application in Si/SiO2 based nanodevice fabrication. Dot exposure shows that dots of a minimum diameter of 16 nm could be patterned using this resist. Linear arrays of dots, connected to each other by very narrow constrictions, are patterned using this resist. When transferred to a thin silicon-on-insulator layer, by reactive ion etching, this structure forms a multiple tunnel junction. Memory devices based on this multiple tunnel junction are fabricated. Memory operation is observed at 20 K.