Ionized Cluster Beams: Physics and Technology
Ionized Cluster Beams: Physics and Technology
复制标题
电离簇束：物理与技术
DOI：
10.1143/jjap.32.2121
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发表时间：
1993
影响因子：
1.5
通讯作者：
G. Takaoka
中科院分区：
文献类型：
--
作者：
I. Yamada;G. Takaoka
离子束沉积（ICB）已被用于形成金属、绝缘体、半导体和有机材料的薄膜，与使用其他技术形成的薄膜相比，它们具有独特的特性。此外，以加速簇的形式使用气相原子最近在表面改性应用中显示出了希望。对ICB沉积和相关技术的基本理解需要研究(1)导致大气相团簇生长的机制，(2)确定大气相团簇尺寸分布的技术，(3)膜成核的初始阶段，(4)与晶格错配和离子束参数相关的膜生长形态。在薄膜生长的早期阶段，透射电子显微镜和扫描隧道显微镜的原子尺度成像极大地帮助了团簇在ICB沉积中的作用的澄清。重点是形成高质量的外延金属薄膜。讨论了ICB薄膜在微电子、光学反射镜、复合材料和有机材料等方面的应用，重点讨论了ICB薄膜的特性。综述了气团加工的应用。
Ionized cluster beam (ICB) deposition has been used to form thin films of metals, insulators, semiconductors and organic materials which have unique characteristics when compared to films formed using other techniques. In addition, the use of gas-phase atoms in the form of accelerated clusters has recently shown promise for surface modification applications. A fundamental understanding of ICB deposition and related techniques requires investigations of (1) the mechanisms which lead to the growth of large vapor phase clusters, (2) techniques for determining the size distribution of large vapor clusters, (3) the initial stages of film nucleation, (4) film growth morphology related to lattice mismatch and ion beam parameters. Clarification of the role of clusters in ICB deposition has been greatly aided by atomic scale imaging by transmission electron microscopy and scanning tunnel microscopy in the early stages of film growth. Emphasis is given to the formation of high-quality, epitaxial metallic films. Several applications of ICB films with respect to microelectronics, optical mirrors, compound materials and organic materials are discussed with emphasis on the special characteristics of ICB films. Applications for gas-cluster processing are reviewed.