Nano-machining of silicon phthalocyanine dichloride films on H-passivated Si(111)
Nano-machining of silicon phthalocyanine dichloride films on H-passivated Si(111)
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H-钝化Si(111)上硅酞菁二氯化物薄膜的纳米加工
DOI：
10.1088/0022-3727/31/9/001
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
R. Palmer
中科院分区：
文献类型：
--
作者：
P. Miao;A. W. Robinson;R. Palmer
在空气中用扫描隧道显微镜 (STM) 操作从溶液中沉积到化学制备的氢钝化 Si(111) 表面上的二氯化硅酞菁薄膜。我们发现，通过在正常成像条件（V、I = 0.35 nA）下重复扫描或使用高隧道电流（10 nA）进行单次扫描，STM 尖端可以在薄膜中创建纳米级方形和沟槽图案。薄膜的光谱测量表明，加工过程中薄膜的化学性质没有发生变化。该薄膜在暴露于空气一段时间后无法加工，这表明发生了某种形式的水解。
Films of silicon phthalocyanine dichloride deposited from solution onto a chemically prepared hydrogen-passivated Si(111) surface were manipulated with the scanning tunnelling microscope (STM) in air. We find that nanometre-scale square and trench patterns can be created in the film by the STM tip through repeated scans under normal imaging conditions ( V, I = 0.35 nA) or by a single scan using a high tunnelling current (10 nA). Spectroscopic measurements of the film show that the film is chemically unchanged by the machining process. The film cannot be machined after exposure to air for a period of days, suggesting that some form of hydrolysis of occurs.