Physics-based insulated-gate bipolar transistor model with input capacitance correction
Physics-based insulated-gate bipolar transistor model with input capacitance correction
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DOI：
10.1049/iet-pel.2014.0169
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发表时间：
2015-03
影响因子：
2
通讯作者：
Xin Yang;M. Otsuki;P. Palmer
中科院分区：
文献类型：
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作者：
Xin Yang;M. Otsuki;P. Palmer
绝缘栅双极晶体管（IGBT）的终端电容在IGBT开关瞬态中起着重要的作用。由于终端电容的工作点依赖特性，其建模是一项困难的任务。特别是，如果要进行精确的建模，则需要仔细处理输入电容。以前，对于平面栅极IGBT，米勒电容的电压依赖关系是通过考虑耗尽区生长模式来建模的。然而，对于现代沟槽闸门设计，没有类似的动态模型可用。此外，还需要考虑其当前的依赖关系。本研究提出了一种改进的基于输入电容校正的IGBT物理模型。通过实验和仿真结果的比较，该模型适用于不同类型的igbt（包括目前最先进的沟栅场停型），适用范围广，实现方便。
Insulated-gate bipolar transistor (IGBT) terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling is a difficult task because of their operating-point-dependent characteristics. In particular, the input capacitance needs careful treatment if accurate modelling is to be performed. Previously, for the planar gate IGBT, the Miller capacitance's voltage dependency is modelled by considering the depletion region growth pattern. For modern trench gate designs, however, there is no similar dynamic model available. Also, its current dependency needs to be accounted for. This study presents an improved IGBT physics-based model with input capacitance correction. By comparison of experimental and simulation results, the proposed model works well for different types of IGBTs (including the state-of-art trench-gate field-stop type) over a wide range of operating conditions and is convenient to implement.