PATTERNING OF CUBIC AND HEXAGONAL GAN BY CL2/N2-BASED REACTIVE ION ETCHING
PATTERNING OF CUBIC AND HEXAGONAL GAN BY CL2/N2-BASED REACTIVE ION ETCHING
复制标题
通过基于 CL2/N2 的反应离子蚀刻对立方和六方 GAN 进行图案化
DOI：
10.1063/1.124131
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发表时间：
1999
影响因子：
4
通讯作者：
K. Ploog
中科院分区：
文献类型：
--
作者：
J. Fricke;B. Yang;O. Brandt;K. Ploog
Chlorine-based dry etching of hexagonal and cubic GaN epilayers grown by dc plasma-assisted molecular beam epitaxy is investigated using a conventional parallel electrode reactor. It is found that the addition of nitrogen results in a shallow maximum for etch rates at 37% N2 content in a low-pressure plasma and a monotonically decreasing etch rate in higher-pressure plasmas. Etching with a low-pressure plasma produces smooth surfaces and almost vertical sidewalls at sufficiently high etch rates.
