Change of the Fermi Surface across the Critical Pressure in CeIn3: The de Haas–van Alphen Study under Pressure
Change of the Fermi Surface across the Critical Pressure in CeIn3: The de Haas–van Alphen Study under Pressure
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DOI：
10.1143/jpsj.74.3016
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发表时间：
2005-11
影响因子：
1.7
通讯作者：
R. Settai;T. Kubo;Tomoyuki Shiromoto;D. Honda;H. Shishido;K. Sugiyama;Y. Haga;T. Matsuda;
中科院分区：
文献类型：
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作者：
R. Settai;T. Kubo;Tomoyuki Shiromoto;D. Honda;H. Shishido;K. Sugiyama;Y. Haga;T. Matsuda;
利用de Haas-van Alphen实验研究了反铁磁体CeIn 3在3GPa压力下费米面的变化。随着压力P的增加，Neel温度TN =10 K降低，在临界压力Pc = 2.6 GPa时变为零。在压力区P > Pc，我们观察到了一个大的主费米面a，这表明CeIn 3中4f电子的电子态在Pc处由定域态转变为巡游态，这与反铁磁体CeRh 2Si 2和CeRhIn 5中的情况相同.当磁场沿着该方向时，主费米面的回旋有效质量mc * 在2.7GPa下极大地增强到Pc：mc *= 60 m0左右.
We have studied a change of the Fermi surface in an antiferromagnet CeIn 3 via the de Haas–van Alphen experiment under pressure up to 3 GPa. With increasing pressure P , the Neel temperature T N =10 K decreases and becomes zero at a critical pressure P c ≃2.6 GPa. In the pressure region P > P c , we have observed a large main Fermi surface named a , which indicates that the electronic state of 4 f electron in CeIn 3 changes from localized to itinerant at P c , as observed in the similar antiferromagnets CeRh 2 Si 2 and CeRhIn 5 . The cyclotron effective mass m c * of this main Fermi surface is extremely enhanced around P c : m c * ≃60 m 0 at 2.7 GPa for the magnetic field along the direction.