Origin of background electron concentration in InxGa1-xN alloys
Origin of background electron concentration in InxGa1-xN alloys
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DOI：
10.1103/physrevb.84.075327
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发表时间：
2011-08
影响因子：
3.7
通讯作者：
B. Pantha;H. Wang;N. Khan;Jingyu Lin;Hongxing Jiang
中科院分区：
文献类型：
--
作者：
B. Pantha;H. Wang;N. Khan;Jingyu Lin;Hongxing Jiang
The origin of high background electron concentration ($n$) in In${}_{x}$Ga${}_{1\ensuremath{-}x}$N alloys has been investigated. A shallow donor was identified as having an energy level (${E}_{D}$${}_{1}$) that decreases with $x$ (${E}_{D}$${}_{1}$ = 16 meV at $x$ = 0 and ${E}_{D}$${}_{1}$ = 0 eV at $x$ \ensuremath{\sim} 0.5) and that crossover the conduction band at $x$ \ensuremath{\sim} 0.5. This shallow donor is believed to be the most probable cause of high $n$ in InGaN. This understanding is consistent with the fact that $n$ increases sharply with an increase in $x$ and becomes constant for $x$ g 0.5. A continuous reduction in $n$ was obtained by increasing the V/III ratio during the epilayer growth, suggesting that nitrogen vacancy-related impurities are a potential cause of the shallow donors and high background electron concentration in InGaN.
The origin of high background electron concentration ($n$) in In${}_{x}$Ga${}_{1\ensuremath{-}x}$N alloys has been investigated. A shallow donor was identified as having an energy level (${E}_{D}$${}_{1}$) that decreases with $x$ (${E}_{D}$${}_{1}$ = 16 meV at $x$ = 0 and ${E}_{D}$${}_{1}$ = 0 eV at $x$ \ensuremath{\sim} 0.5) and that crossover the conduction band at $x$ \ensuremath{\sim} 0.5. This shallow donor is believed to be the most probable cause of high $n$ in InGaN. This understanding is consistent with the fact that $n$ increases sharply with an increase in $x$ and becomes constant for $x$ g 0.5. A continuous reduction in $n$ was obtained by increasing the V/III ratio during the epilayer growth, suggesting that nitrogen vacancy-related impurities are a potential cause of the shallow donors and high background electron concentration in InGaN.