Minimizing 1-micron absorption losses in CdSiP2
Minimizing 1-micron absorption losses in CdSiP2
复制标题
最大限度地减少 CdSiP2 中的 1 微米吸收损耗
DOI：
10.1117/12.2655201
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Zawilski K
中科院分区：
文献类型：
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作者：
Zawilski K
在所有实用的非线性光学晶体中，磷化镉硅镉(CSP)具有最高的d系数(d36=85 pm/V)。其2.45 eV的大带隙允许使用广泛可用的基于Nd和Yb的激光光源进行1微米泵浦，其色散特性使得1微米泵浦产生6.2-6.5微米之间的非临界相位匹配温度可调输出(这是一个有吸引力的微创激光手术范围)。然而，CSP的剩余1微米吸收损耗并不是微不足道的(0.16-0.2厘米-1)。在这项工作中，我们专注于通过将EPR光谱与1微米附近的极化吸收相关联来识别并最终最小化导致这些损失的点缺陷。
Cadmium silicon phosphide, CdSiP2 (CSP), exhibits the highest d-coefficient (d36 = 85 pm/V) among all practical nonlinear optical crystals. Its large band gap of 2.45 eV allows for 1-micron pumping with widely-available Nd- and Yb-based laser sources, and its dispersion properties are such that a 1-um pump yields non-critically phase-matched temperature-tunable output between 6.2-6.5 um (an attractive range for minimally-invasive laser surgery). However, residual 1-um absorption losses in CSP are not insignificant (0.16-0.2 cm-1). In this work we focused on identifying, and ultimately minimizing, the point defects responsible for these losses by correlating EPR spectra with polarized absorption near 1-um.