Critical current and negative magnetoresistance of superconducting film with edge barrier
Critical current and negative magnetoresistance of superconducting film with edge barrier
复制标题
边缘势垒超导薄膜的临界电流和负磁阻
DOI：
10.1209/epl/i2001-00200-6
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发表时间：
2001
期刊：
影响因子：
1.8
通讯作者：
I. Maksimov
中科院分区：
文献类型：
--
作者：
G. Maksimova;N. V. Zhelezina;I. Maksimov
场相关的临界电流 Ic(H) 和电流-电压特性可在广义临界态模型中找到，该模型将表面势垒和体钉扎解释为 II 型超导体中的主要不可逆机制。对薄膜超导体的精确可解情况进行了计算，同时考虑了序参数方程的金兹堡-朗道非线性。对于任意磁场，薄膜的电流-电压特性的形状是确定的。发现了微分薄膜电阻率的非单调场依赖性，其特征在于低场区域中的负磁阻和高场区域中的类Bardeen-Stephen行为。
The field-dependent critical current Ic(H) and current-voltage characteristics are found within a generalized critical-state model that accounts for both surface barrier and bulk pinning as major irreversibility mechanisms in type-II superconductors. Calculations are made for an exactly solvable case of a thin-film superconductor taking into account the Ginzburg-Landau nonlinearity of the order-parameter equation. The shape of the current-voltage characteristics of the film is determined for arbitrary magnetic field. The nonmonotonous field dependence of the differential film resistivity is discovered, which is characterized by a negative magnetoresistance in a low-field region and by the Bardeen-Stephen-like behaviour in a high-field region.