Electronic States in High- T c Copper-Oxide Superconductors. II
Electronic States in High- T c Copper-Oxide Superconductors. II
复制标题
高温氧化铜超导体中的电子态。
DOI：
10.1143/jpsj.59.2820
复制
发表时间：
1990
影响因子：
1.7
通讯作者：
Y. Kuroda
中科院分区：
文献类型：
--
作者：
Hisao Jichu;T. Matsuura;Y. Kuroda
本文用p-d模型研究了CuO 2层中的电子态，并采用辅助玻色子方法处理了局域电子关联。已经发现的是：在足够低的温度下，电子态形成相干带，其宽度和强度强烈地取决于掺杂载流子的数量（对于空穴比电子更显著）和p-d电荷转移能量。特别地，当掺杂空穴数nh较小时，在能隙内费米能级附近形成一个新的能带，其宽度和强度与nh成正比。即便如此，费米面仍然由未成对电子的总数决定，这些电子主要是局域d电子。
The electronic states in the CuO 2-layer have been studied by using the p-d model with the help of the auxiliary boson method for treating the local electronic correlation properly. What have been found are: at sufficiently low temperature the electronic states form coherent bands, whose width and intensity are strongly depending upon number of doped carriers (more significantly for holes than electrons) and the p-d charge transfer energy. In particular, when the number of doped-holes n h is small, a new band form around the Fermi level inside the energy gap and its width and intensity are proportional to n h. Even then the Fermi surface is still determined by the total number of unpaired electrons which are mainly of the localized d-electrons.
DOI：
10.1007/bf01303701
发表时间：
1986-01-01
期刊：
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER
影响因子：
--
作者：
BEDNORZ, JG;MULLER, KA
通讯作者：
MULLER, KA