Evolution of step-terrace structure at Si–SiO2 interface in SIMOX substrate during annealing
Evolution of step-terrace structure at Si–SiO2 interface in SIMOX substrate during annealing
复制标题
SIMOX 衬底中 Si-SiO2 界面处退火过程中台阶结构的演变
DOI：
10.1016/s0169-4332(01)00834-0
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
Y. Omura
中科院分区：
文献类型：
--
作者：
T. Ishiyama;M. Nagase;Y. Omura
用原子力显微镜（AFM）观察了氧注入分离衬底去除sio2和Si层后，在Si层和埋藏的sio2层之间的界面处出现阶梯状结构。通过原子力显微镜数据的标度分析，分析了高温退火过程中si - sio2界面粗糙度的时间演变。相关长度与方域结构的大小有很好的对应关系。长度尺度指数的减小表明随着退火的进行，生长机制发生了变化。
The step-terrace structures at the interface between the Si layer and the buried SiO2layer of a Separation by IMplanted OXygen substrate has been observed by using atomic force microscopy (AFM) after removing the SiO2and Si layers. The time evolution of the Si–SiO2interface roughness during high-temperature annealing was analyzed by the scaling analysis of AFM data. The correlation length exhibited a nice correspondence to the size of square domain structures. Decreasing in the index of the length scale indicates that the growth mechanism changes as the annealing proceeds.