Potential-Dependent Electron Injection in Nanoporous Colloidal ZnO Films
Potential-Dependent Electron Injection in Nanoporous Colloidal ZnO Films
复制标题
DOI：
10.1021/j100038a048
复制
发表时间：
1995-09
期刊：
影响因子：
--
通讯作者：
P. Hoyer;H. Weller
中科院分区：
文献类型：
--
作者：
P. Hoyer;H. Weller
通过循环伏安法和电位阶跃法定量研究了胶体ZnO薄膜的荷电行为。在锌还原发生之前，膜的每个胶体颗粒（平均粒径5.9 nm）上可以存储多达六个电子。薄膜的荧光和吸光度在每个粒子上存储少于一个电子的潜在区域中已经受到强烈影响。恒电位控制和时间分辨的光电流测量显示的陷阱填充的影响，以及通过薄膜的电荷传输的电解质的作用。
We have quantitatively investigated the charging of colloidal ZnO films by cyclic voltammetry and potential step measurements. Up to six electrons can be stored on each colloidal particle of the film (mean particle diameter 5.9 nm) before zinc reduction occurs. Fluorescence and absorbance of the films are already strongly influenced in potential regions where less than one electron is stored on each particle. Potentiostatically controlled and time-resolved photocurrent measurements show the influence of trap filling as well as the role of the electrolyte on the charge transport through the films.